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The author makes the Band (calculation) Map in Japn.
[Band map in Japan]
The author selects the best 10 papers for electronic structure
calculations.
[Best 10]
At 1996, the author started the study of the TiC(001)-1x1 surface
system by using the first-principles molecular dynamics (FPMD) method.
Already, this have been calculated by some theoretical groups(Ref:
D. L. Price, J. M Wills and B. R. Cooper(PWC), Phys. Rev. Lett.,
Vol77, No.10, p3375(1996), some other references there in.).
In addition, ZrC, NbC, HfC and TaC(001)-1x1 surfaces have also been
studied [1].
Electronic and lattice properties of bulk for NbC, HfC, ZrC, OsC and
TaC are caluclated at a NaCl structure with and without PCC(See [table IV],png,5.4KB) in order to
investigate which atom(carbon or transition metal[TM]) is outward or
inward on the surface(6/24, 1998).
The accuracy with pcc is slightly better than that without pcc(4/14,
1999) for bulk.
The (001) surface is non-polarized in which the numbers of carbon and
TM atoms are equal each other on the outermost layer.
In this study, the transition metal (TM) carbide surface (periodic
super cell model including 9 TM-C layers as a slab and vaccum region
as the same thickness of slab) are optimized only in a [001]
direction.
The surface electronic structures in the optimized structures are
metallic in all cases.
(Bulk TiC[rock salt structure] is also metalic.)
In most cases, the carbon atoms are displaceed outward and TM atoms
inward on the top layer with and without PCC, except for the case of TiC
without PCC.
This trend for TiC and TaC agrees with above theoretical
results(PWC).
Moreover, charge densities of surfaces, work function, etc. are
calculated in this study(4/25, 2000).
As for TM pseudopotentials, it is found that considering a partial
core correction(PCC, S. G. Louie, S. Froyen and M. L. Cohen,
Phys. Rev. B26, 1738(1982)) is very important in the structural
optimization.
Transition metal nitride surfaces (TiN, ZrN, NbN, HfN and TaN(001)-1x1) have also been investigated [2].
Reference:
[1] K. Kobayashi: Jpn. J. Appl. Phys. Vol. 39, No. 7B (2000) 4311.
[2] K. Kobayashi: Surface Science 493 (2001) 665.: (for TMN surfaces, [DOI: 10.1016/S0039-6028(01)01280-8](*))
[3] K. Kobayashi, "First-principles study of the TiX(X = B, C, O, N and F) surfaces", in proceedings of JK2000, (2001) 285. [PDF](nims.go.jp/cmsc/, PDF, 174 kb)
[4]K. Kobayashi, N. Kobayashi, and K. Hirose, "First-Principles Study of TiN/MgO Interfaces", e-J. Surf. Sci. Nanotech., 12 (2014) 230 - 237 (ACSIN-12 & ICSPM21) [DOI: 10.1380/ejssnt.2014.230]
[5]K. Kobayashi, H. Takaki, N. Kobayashi, and K. Hirose, "Electronic Band Structure of Various TiN/MgO Superlattices", JPS Conf. Proc. 5 (2015) 011013 (CSW2014).
[6]Hirokazu Takaki, Kazuaki Kobayashi, Masato Shimono, Nobuhiko Kobayashi and Kenji Hirose, "First-principles calculations of thermoelectric properties of TiN/MgO superlattices - the route for enhancement of thermoelectric effects in artificial nanostructures", J. Appl. Phys. 119 (2016) 014302.
[7]Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Nobuhiko Kobayashi, and Kenji Hirose, "Electronic band structure of TiN/MgO nanostructures", Jpn. J. Appl. Phys. 56[4S] (2017) 04CK06 (Special issue).
[8]Hirokazu Takaki, Kazuaki Kobayashi, Masato Shimono, Nobuhiko Kobayashi, and Kenji Hirose, "Enhancement of thermoelectric properties in surface nanostructures", J. Electron. Mater. 46[10], 5593 - 5598 (2017).
[9]Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Nobuhiko Kobayashi, and Kenji Hirose, "Electronic Band Structure of TiN/MgO-4x4 and 5x5 Nanostructures", Jpn. J. Appl. Phys. 58[SB] (2019) SBBH06 (Special issue).
[10]Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Nobuhiko Kobayashi, and Kenji Hirose, "Electronic and Lattice Properties of Nanostructured TiN/MgO and ScN/MgO Superlattices", Jpn. J. Appl. Phys. 60[SE] (2021) SE1006 (Special issue).
[Figure](png,30KB,TiC(001)1x1 surface
[structural optimized], Green and red circles are C and Ti,
respectively.)
The author attempts to investigate electronic band structures in a
variety of pressure conditions[from 3 to 300 GPa] for Ga(fcc) and
In(fcc).
In this calculation, shallow 3d and 4d core states are treated as
valence states in order to obtain critical pressures of overlapping of
3d and 4s (4d and 5s) states for Ga (In).
It is found that the critical pressures are about 70GPa for Ga and
120GPa for In[1](Japanese version),[2](Abstract,large postscript file ,
160kbytes),(Proceedings of AIRAPT-16 and HPCJ-38, Vol. 7,
196-198(1998),Very Large postscript
file,623kb), K. Takemura, K. Kobayashi and M. Arai,
Phys. Rev. B58, 2482-2486(1999)
for Ga only.
As a result of theoretical calculations, a contribution to critical
pressure of phase transition(bct-fcc) for Ga due to overlapping of
valence s and shallow core d states is small(4/14, 1999).
On the other hand, it should be noted that the actual shallow d core
states for Ga and In are deeper than those calculated on the basis of
the local density approximation(LDA) in the density functional
theory[refer to E. Wigner, Phys.
Rev. 46, 1002(1934), W. Kohn and L. J. Sham, Phys Rev. 140,
A1133(1965), P. Hohenberg and W. Kohn, Phys. Rev. 136,
B864(1964)].
Recently(1/20, 1998), the author have studied to calculate
electronic properties of Tl under high-pressure conditions.
The critical pressure of overlap between valence 6s- and core
5d-states for Tl is 10 GPa because of a very shallow core d-state.
This figure(png file, 118KB) is a
variation of electronic band structures of Tl from 1 to 128 GPa.
These critical pressures may be underestimated on the comparison with
the actual critical pressures in which the bottom of the valence states
touches the top of the shallow core states, respctively.
This suggests that it is necessary to consider beyond LDA
calculation(GGA,SIC,GW-approximation,etc.).
(Update 6/28,1996)
[Legendre(l=3)] (png,large,about 30KB)
The author selects the important papers for electronic structure
calculations.
[Important papers]
The author selects the memorandum for electronic structure
calculations.
[Memorandom]
The author selects papers of materials by using the electronic
structure calculations.
[Materials]
The author selects papers of DFT,LDA and related topics.
[DFT,LDA]
The author's main and "BandStructure.jp" sites have been opened.
Main [site]
BandStructure.jp [site]
We calculate the MgB2(AlB2 structure: P6/mmm)
bulk systems under various compression conditions (hydrostatic,
c-axis[1] and a,b-axis[2]).
Electronic and lattice properties are obtained by using the FPMD. In
detail, please see references[1][2][3].
[1] K. Kobayashi and K. Yamamoto, J. Phys. Soc. Jpn., Vol. 70, No. 7 (2001) 1861.
[2] K. Kobayashi and K. Yamamoto, J. Phys. Soc. Jpn, Vol. 71, No. 2 (2002) 397.
[3] K. Kobayashi, M. Arai and K. Yamamoto, J. Phys. Soc. Jpn. 72, No. 11 (2003) 2886.
We calculate the LiBC(hexagonal, A-B stacking: P63/mmc symmetry) bulk systems under various compression conditions (hydrostatic, c-axis and a,b-axis)[1][2].
Electronic and lattice properties are obtained by using the FPMD and all-electron method(FLAPW: WIEN2k code for LiBC).
We found the lattice anomalies of LiBC and HBC under anisotropic compression (a, b-axis compression).
Lattice constants c for LiBC and HBC contract under a, b-axis compression.
Lattice constant a (b) of MgB(h-BN) contracts under c-axis compression.
These anomalous behaviors show a kind of negative Poisson ratios. HBC and MgB(h-BN) are hypothetical compounds.
In detail, please see references[1]-[6].
[1] K. Kobayashi and M. Arai, "LiBC and related compounds under high pressure", Physica C 388 - 389 (2003) 201 - 202 (LT23).
[2] K. Kobayashi and M. Arai, "Lattice Anomaly of LiBC and Related Compounds under Anisotropic Compression", Journal of the Physical Society of Japan, Vol. 72, No. 2 (2003) 217.
[3] Related paper: K. Kobayashi, M. Arai and K. Yamamoto, J. Phys. Soc. Jpn. 72, No. 11 (2003) 2886.
[4] K. Kobayashi and M. Arai, Mater. Trans., Vol. 45, No. 5, (2004) 1465 - 1468.
[5] K. Kobayashi and M. Arai, Molecular Simulation, Vol. 30, No. 13 -15 (2004) 981 - 986 [ICMS-CSW2004].
[6] K. Kobayashi, M. Arai and T. Sasaki, "Lattice Anomalies of MBC (M = H, Li, Na) Under Anisotropic Compression", , Trans. MRS-J, Vol. 29, No. 8, 3799 - 3802 (2004) [IUMRS-ICAM2003].:(Related paper)
We calculate a hypothetical hexagonal layered compound of C6B2 and related materials in order to search new superconductors.
Some of them have characteristic unoccupied flat bands close to the Fermi level at the Γ - A line. One of them[1] shows weak anharmonicity for a B-C bonding. Most of calculated compounds are energetically unfavorable. More detailed lattice dynamics calculations and to search more stable structures are our next task.
In detail, please see references[1]-[3].
[1]K. Kobayashi, Y. Zenitani and J. Akimitsu, "First-Principles Study of C6B2", Physica C, Vol. 426-431, Part 1. (2005) 374 - 380 [ISS2004] <-- As a result of more accurate calculations, we find that anharmonicity of C6B2 is weak (b4/(a2)2 is about 1).
[2]K. Kobayashi, M. Arai and K. Yamamoto, "First-principles study of C6B2 and related compounds", in proceedings of IWSDRM2005 (STAM, Vol. 7, Supplement 1 (2006) 71 - 77).
[3]K. Kobayashi, M. Arai and K. Yamamoto, "First-principles study of C6M2 (M = B, Al, Mg, Li), C7B and related compounds", Mater. Trans., Vol. 47, No. 11 (2006) 2629 - 2637[AlC2, MgC2, LiC2, LiB2].
Related [page](B-, C- and BC-compounds, go to bandstructure.jp)
We calculate various hexagonal BN phases in order to investigate
their electronic (electronic band structures, direct or indirect band
gap, VBM - CBM) and lattice properties.
VBM: Valence band maximum
CBM: Conduction band minimum
The electronic band structure of [h-BN](png,
26.2 KB, bandstructure.jp).
In detail, please see the reference[1].
[1]K. Kobayashi, K. Watanabe and T. Taniguchi, "First-principles
study of various h-BN phases", Journal of the Physical Society
of Japan, Vol. 76, No. 10 (2007) 104707.
We calculate 5H-BN and related polytypes in order to investigate
their electronic and lattice properties.
The electronic band structure of [5H-BN](png,
40 KB, bandstructure.jp).
In detail, please see the reference[1].
[1]K. Kobayashi and S. Komatsu, "First-principles study of 5H-BN",
Journal of the Physical Society of Japan, Vol. 76, No. 11 (2007) 113707.
We calculate 2H, 3H(=3C), 4H, 5H and 6H polytypes for BN, SiC and
AlN in order to investigate their electronic and lattice
properties.
6H polytype has two crystal structures as ABCACB and ABCBCB. Crystal
symmetries of ABCACB and ABCBCB are P63mc and P3m1,
respectively. A stacking sequence of ABCACB is most commonly accepted.
Total energies of 6H-BN(ABCACB) and 6H-SiC(ABCACB) are lower than
those of 6H-BN(ABCBCB) and 6H-SiC(ABCBCB). In contrast, the total
energy of 6H-AlN(ABCBCB) is lower than that of 6H-AlN(ABCACB).
The total energies of BN and AlN polytypes are related to their
hexagonalities.
In addition, we have investigate 10H-BN and 10H-AlN[2]. The 10H
polytype has 58 structures. We choose four polytype structures whose
hexagonalities (H) are 20, 40, 60 and 80 %. The total energy of
the calculated 10H-BN structure increases with increasing hexagonality
and that of the calculated 10H-AlN structure decreases with increasing
hexagonality. This trend is consistent with the previous study of 2H -
6H polytypes for BN and AlN[1]. The band gaps of the calculated 10H-BN
and 10H-AlN polytype structures are indirect.
Furthermore, we have calculated 8H-, 10H, 12H- and 18H-SiC
polytypes[5]. In this study, it is found that 10H-SiC(ABCACBCACB,
H = 40 %, Zhdanov notation: 3322)) is most stable in the
calculated SiC polytypes[1][5]. This trend is invariant in LDA[BH] and
GGA[PBE] calculations.
In detail, please see the reference[1].
[1]K. Kobayashi and S. Komatsu, "First-principles study of BN, SiC,
and AlN polytypes", Journal of the Physical Society of Japan, Vol. 77,
No. 8 (2008) 084703.
[2]K. Kobayashi and S. Komatsu, "First-principles study of 10H-BN
and 10H-AlN", Journal of the Physical Society of Japan, Vol. 78, No. 4
(2009) 044706.
[3]K. Kobayashi and S. Komatsu, "First-Principles Study of 6H-AlN
under various pressure conditions", J. Phys.: Conf. Ser. 215, 012111(2010).
[4]K. Kobayashi and S. Komatsu: "First-Principles Study of 30H-BN
polytypes", Materials Transactions, Vol. 51, No. 9 (2010) 1497[6H-BN,
30H-BN].
[5]K. Kobayashi and S. Komatsu, "First-Principles Study of 8H-,
10H-, 12H-, and 18H-SiC Polytypes", Journal of the Physical Society of
Japan, Vol. 81, No. 2 (2012) 024714[8H-SiC][10H-SiC][12H-SiC][18H-SiC].
[6]K. Kobayashi and S. Komatsu, "First-Principles Study of Various BN, SiC, and AlN polytypes", Trans. MRS-J, Vol. 37, 583-588 (2012)[IUMRS-ICEM2012][20H-SiC][30H-AlN][48H-BN].
[7]K. Kobayashi and S. Komatsu, "First-Principles Study of AlBN and Related Polytypes", Trans. MRS-J, Vol. 38[3], 485-492 (2013)[4H-AlBN][4H-AlAsN][4H-AlPN][2H-, 3H-, 5H-, 6H-, and 12H-AlBN][3x2H-AlBN].
Reprints of [10H-SiC][30H-BN][10H-BN(10H-AlN)][6H-AlN][5H-BN][h-BN] are availabe at present.
We can send the reprints by request (E-mail).
(References)
[BH] U. von Barth and L. Hedin, J. Phys. C5, 1629(1972).
[PBE] J. P. Perdew, K. Burke, and M. Ernzerhof,
Phys. Rev. Lett. 77, 3865(1996).
We have calculated the TiN/MgO interfaces.
Please see the references [4][5][6][7][8][9][10].
We have calculated Si- and Te-doped CoSb3 compounds and Cr-doped CoSb3 thin films.
References:
[1]A. U. Khan, K. Kobayashi, D. Tang, Y. Yamauchi, K. Hasegawa, M. Mitome, Y. Xue, B. Jiang, K. Tsuchiya, D. Golberg, Y. Bando, and T. Mori, "Nano-micro-porous skutterudites with 100% enhancement in ZT for high performance thermoelectricity", Nano Energy, 31, 152 - 159 (2017).
[2]Kazuaki Kobayashi, Atta Ullah Khan, and Takao Mori, "Electronic structures of Si- and Te-doped CoSb3 compounds under high pressures", Jpn. J. Appl. Phys. 56[5S3] (2017) 05FB07 (Special issue).
[3]Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Hiroyuki Ishii, Nobuhiko Kobayashi, Kenji Hirose and Takao Mori, "Electronic and magnetic properties of CoSb3, Cr-doped CoSb3, and related compound thin films", Jpn. J. Appl. Phys. 62 (2023) SC1046 (Special issue).
[Related thin films] We have calculated Fe2VAl and Fe2VAl/Si thin films.
References:
[4]Kazuaki Kobayashi, Hirokazu Takaki, Masato Shimono, Hiroyuki Ishii, Nobuhiko Kobayashi, Kenji Hirose, Naohito Tsujii and Takao Mori, "First-principles study of Fe2VAl and Fe2VAl/Si thin films and their magnetic properties", Jpn. J. Appl. Phys. 61 (2022) SL1013 (Special issue).
In preparation.
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